A non-vacuum process for forming CuInSe2
Identifieur interne : 014262 ( Main/Repository ); précédent : 014261; suivant : 014263A non-vacuum process for forming CuInSe2
Auteurs : RBID : Pascal:99-0324155Descripteurs français
- Pascal (Inist)
- 8115, 8460J, Etude expérimentale, Méthode mesure, Cellule photovoltaïque, Cuivre séléniure, Indium séléniure, Gallium séléniure, Couche mince, Fabrication, Microstructure, Efficacité, Spectre visible, Spectre IR, Cuivre composé, Indium composé, Gallium composé, Sélénium composé, Microstructure cristalline, Evaluation performance, Procédé fabrication.
English descriptors
- KwdEn :
- Copper compounds, Copper selenides, Crystal microstructure, Efficiency, Experimental study, Fabrication, Gallium compounds, Gallium selenides, Indium compounds, Indium selenides, Infrared spectra, Manufacturing processes, Measuring methods, Microstructure, Performance evaluation, Photovoltaic cells, Selenium compounds, Thin films, Visible spectra.
Abstract
A new technique for fabricating thin films of CuInSe2 and its alloys for low-cost photovoltaics has been developed. The technique uses simple, self-limiting, non-vacuum processes to prepare particulate precursor materials, to deposit layers of these precursor materials, and to convert the precursor layers into CuInSe2 films. An NREL confirmed 8.5% efficient solar cell has been achieved with CuIn1-xGaxSe2 in early research. The simplicity and low cost of the technique are well suited to manufacturing in a wide variety of settings, including in developing countries where industrial infrastructure is currently limited. © 1999 American Institute of Physics.
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Eberspacher</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park, California 91320</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park</wicri:cityArea></affiliation></author><author><name sortKey="Pauls, K" uniqKey="Pauls K">K. Pauls</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park, California 91320</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park</wicri:cityArea></affiliation></author><author><name sortKey="Serra, J" uniqKey="Serra J">J. Serra</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park, California 91320</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park</wicri:cityArea></affiliation></author><author><name sortKey="Zhu, J" uniqKey="Zhu J">J. Zhu</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716-3820</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0324155</idno><date when="1999-03-05">1999-03-05</date><idno type="stanalyst">PASCAL 99-0324155 AIP</idno><idno type="RBID">Pascal:99-0324155</idno><idno type="wicri:Area/Main/Corpus">014C36</idno><idno type="wicri:Area/Main/Repository">014262</idno></publicationStmt><seriesStmt><idno type="ISSN">0094-243X</idno><title level="j" type="abbreviated">AIP conf. proc.</title><title level="j" type="main">AIP conference proceedings</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper compounds</term><term>Copper selenides</term><term>Crystal microstructure</term><term>Efficiency</term><term>Experimental study</term><term>Fabrication</term><term>Gallium compounds</term><term>Gallium selenides</term><term>Indium compounds</term><term>Indium selenides</term><term>Infrared spectra</term><term>Manufacturing processes</term><term>Measuring methods</term><term>Microstructure</term><term>Performance evaluation</term><term>Photovoltaic cells</term><term>Selenium compounds</term><term>Thin films</term><term>Visible spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115</term><term>8460J</term><term>Etude expérimentale</term><term>Méthode mesure</term><term>Cellule photovoltaïque</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Gallium séléniure</term><term>Couche mince</term><term>Fabrication</term><term>Microstructure</term><term>Efficacité</term><term>Spectre visible</term><term>Spectre IR</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Sélénium composé</term><term>Microstructure cristalline</term><term>Evaluation performance</term><term>Procédé fabrication</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A new technique for fabricating thin films of CuInSe<sub>2</sub> and its alloys for low-cost photovoltaics has been developed. The technique uses simple, self-limiting, non-vacuum processes to prepare particulate precursor materials, to deposit layers of these precursor materials, and to convert the precursor layers into CuInSe<sub>2</sub> films. An NREL confirmed 8.5% efficient solar cell has been achieved with CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> in early research. The simplicity and low cost of the technique are well suited to manufacturing in a wide variety of settings, including in developing countries where industrial infrastructure is currently limited. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0094-243X</s0></fA01><fA02 i1="01"><s0>APCPCS</s0></fA02><fA03 i2="1"><s0>AIP conf. proc.</s0></fA03><fA05><s2>462</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A non-vacuum process for forming CuInSe<sub>2</sub></s1></fA08><fA11 i1="01" i2="1"><s1>FREDRIC (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>EBERSPACHER (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>PAULS (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>SERRA (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHU (J.)</s1></fA11><fA14 i1="01"><s1>UNISUN, 587-F North Ventu Park Road, Suite 124, Newbury Park, California 91320</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716-3820</s1><sZ>5 aut.</sZ></fA14><fA20><s1>158-163</s1></fA20><fA21><s1>1999-03-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21757</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0324155</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>AIP conference proceedings</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A new technique for fabricating thin films of CuInSe<sub>2</sub> and its alloys for low-cost photovoltaics has been developed. The technique uses simple, self-limiting, non-vacuum processes to prepare particulate precursor materials, to deposit layers of these precursor materials, and to convert the precursor layers into CuInSe<sub>2</sub> films. An NREL confirmed 8.5% efficient solar cell has been achieved with CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> in early research. 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